Tài liệu Thư viện số

Danh mục TaiLieu.VN

Dual-switch power gating technique with small energy loss, low area, short crossover time, and fast wake-up time for fine-grain leakage controlled VLSIs

In this paper, we compared various power gating schemes in terms of energy loss, crossover time, and wake-up time using the 45-nm Predictive Technology Model. In this comparison, the Dual-Switch Power Gating (DSPG) shows smaller energy loss, shorter crossover time,
faster wake-up time than the other power gating schemes such as the Single-Switch and Charge-Recycled Power Gating schemes. Based on these advantages, the DSPG is suggested in this paper as a viable candidate suitable to a fine-grain leakage control scheme, where logic blocks go in and out very frequently and shortly between the active
and sleep modes

Từ khóa: low-leakage; power gating; sleep transistor; fine-grain leakage control; crossover time; wake-up time

7 p ovanketv4 06/07/2017 462 3

Bạn đang xem trang mẫu tài liệu này.
Bình luận